features trenchfet power mosfet SI4925DY vishay siliconix document number: 71795 s-04884?rev. d, 22-oct-01 www.vishay.com 2-1 dual p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.032 @ v gs = - 10 v - 6.3 -30 0.045 @ v gs = - 4.5 v - 5.3 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d - 6.3 - 4.7 continuous drain current (t j = 150 c) a t a = 70 c i d - 5.0 - 3.7 a pulsed drain current i dm -40 a continuous source current (diode conduction) a i s - 1.7 - 0.9 maximum power dissipation a t a = 25 c p d 2 1.1 w maximum power dissipation a t a = 70 c p d 1.3 0.70 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typ max unit mi j ti tabit a t 10 sec r 45 62.5 maximum junction-to-ambient a steady-state r thja 85 110 c/w maximum junction-to-foot (drain) steady-state r thjf 28 35 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI4925DY vishay siliconix www.vishay.com 2-2 document number: 71795 s-04884?rev. d, 22-oct-01 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a -1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v, t j = 55 c -25 a on-state drain current b i d(on) v ds -5 v, v gs = - 10 v -20 a drain source on state resistance b r ds( ) v gs = - 10 v, i d = - 6.3 a 0.024 0.032 drain-source on-state resistance b r ds(on) v gs = - 4.5 v, i d = - 5.3 a 0.036 0.045 forward transconductance b g fs v ds = - 15 v, i d = - 6.3 a 14 s diode forward voltage b v sd i s = - 1.7 a, v gs = 0 v - 0.8 - 1.2 v dynamic a total gate charge q g 27 50 gate-source charge q gs v ds = - 15 v, v gs = - 10 v, i d = - 6.3 a 6 nc gate-drain charge q gd 4.5 turn-on delay time t d(on) 16 20 rise time t r v dd = - 15 v, r l = 15 10 20 turn-off delay time t d(off) v dd = - 15 v , r l = 15 i d - 1 a, v gen = - 10 v, r g = 6 55 80 ns fall time t f 20 40 source-drain reverse recovery time t rr i f = - 1.7 a, di/dt = 100 a/ s 40 90 notes a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. typical characteristics (25 c unless noted) 0 8 16 24 32 40 012345 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 10 thru 5 v 25 c t c = - 55 c 125 c 3 v output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 4 v
SI4925DY vishay siliconix document number: 71795 s-04884?rev. d, 22-oct-01 www.vishay.com 2-3 typical characteristics (25 c unless noted) 0.00 0.04 0.08 0.12 0.16 0.20 0246810 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 c rss c oss c iss v ds = 15 v i d = 6.3 a v gs = 10 v i d = 6.3 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 1.5 1 10 40 0 0.3 0.6 0.9 t j = 25 c t j = 150 c source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s i d = 6.3 a on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v) v gs = 4.5 v 1.2
SI4925DY vishay siliconix www.vishay.com 2-4 document number: 71795 s-04884?rev. d, 22-oct-01 typical characteristics (25 c unless noted) 0 15 30 5 10 power (w) single pulse power time (sec) 20 25 10 -3 10 -2 1 10 600 10 -1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100 600 10 10 -1 10 -3 - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a threshold v oltage variance (v) v gs(th) t j - temperature ( c) 10 -2
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